dmp1012ucb9 document number: ds36844 rev. 7 - 2 1 of 6 www.diodes.com january 2015 ? diodes incorporated dmp1012ucb9 new product advance information advanced information p-channel enhancement mode mosfet product summary (typ. @ v gs = -4.5v, t a = +25c) v dss r ds(on) q g q gd i d -8v 8.2m 8.1nc 1.8nc -10a description this 3 rd generation lateral mosfet (ld-mos) is engineered t o minimize on-state losses and switch ultra-fast, mak ing it ideal for high efficiency power transfer. it uses chip-scale packa ge (csp) to increase power density by combining low thermal imp edance with minimal r ds(on) per footprint area. applications ? dc-dc converters ? battery management ? load switch features ? ld-mos technology with the lowest figure of merit: r ds(on) = 8.2m to minimize on-state losses q g = 8.1nc for ultra-fast switching ? v gs(th) = -0.8v typ. for a low turn-on potential ? csp with footprint 1.5mm 1.5mm ? height = 0.62mm for low profile ? esd = 6kv hbm protection of gate ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliabilit y mechanical data ? case: u-wlb1515-9 ? terminal connections: see diagram below ordering information (note 4) part number case packaging dmp1012ucb9-7 u-wlb1515-9 3,000/tape & reel notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http ://www.diodes.com/products/packages.html. marking information u-wlb1515-9 date code key year 2012 2013 2014 2015 2016 2017 2018 code z a b c d e f month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top-view pin configuration x w = product type marking code ym = date code marking y or y = year (ex: b = 2014) m or m = month (ex: 9 = september) equivalent circuit g s s d d d ss s u - wlb1515 - 9
dmp1012ucb9 document number: ds36844 rev. 7 - 2 2 of 6 www.diodes.com january 2015 ? diodes incorporated dmp1012ucb9 new product advance information advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -8 v gate-source voltage v gss -6 v continuous drain current (note 5) v gs = -4.5v steady state t a = +25c t a = +70c i d -10 -8 a continuous drain current (note 6) v gs = -4.5v steady state t a = +25c t a = +70c i d -7.4 -6.0 a pulsed drain current (pulse duration 10 s, duty cycle 1%) i dm -50 a continuous source pin current (note 6) i s -2 ? pulsed source pin current (pulse duration 10s, dut y cycle 1%) i sm -15 ? continuous gate current i g -0.5 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) p d 0.89 w total power dissipation (note 6) p d 1.57 w thermal resistance, junction to ambient (note 5) r ja +142.1 c/w thermal resistance, junction to ambient (note 6) r ja +80.5 c/w operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain-source breakdown voltage bv dss -8 ? ? v v gs = 0v, i d = -250 a gate to source voltage bv s g s -6 ? ? v v d s = 0v, i g = -250 a zero gate voltage drain current @t c = +25c i dss ? ? -1 a v ds = -4.0v, v gs = 0v gate-source leakage i gss ? ? -100 na v gs = -4.0v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) -0.4 -0.8 -1.1 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? 8.2 10 m v gs = -4.5v, i d = -2a 10 13 v gs = -3.0v, i d = -2a 11 14 v gs = -2.5v, i d = -2a forward transfer admittance |y fs | ? 16.8 ? s v ds = -4v, i d = -2a diode forward voltage (note 6) v sd ? -0.7 -1 v v gs = 0v, i s = -2a reverse recovery charge q rr ? 6.3 ? nc v dd = -5v, i f = -2a, di/dt = 200a/ s reverse recovery time t rr ? 18.5 ? ns dynamic characteristics (note 8 ) input capacitance c iss ? 817 1060 pf v ds = -4v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 595 770 pf reverse transfer capacitance c rss ? 269 350 pf series gate resistance r g ? 1.9 ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (4.5v) q g ? 8.1 10.5 nc v gs = -4.5v, v ds = -4v, i d = -2a gate-source charge q gs ? 0.9 ? nc gate-drain charge q gd ? 1.8 ? nc turn-on delay time t d(on) ? 6.2 10 ns v dd = -4v, v gs = -4.5v, i ds = -2a, r g = 10 , turn-on rise time t r ? 22.6 ? ns turn-off delay time t d(off) ? 30.1 48 ns turn-off fall time t f ? 22.7 ? ns notes: 5. device mounted on fr-4 pcb with minimum recommended pad layout. 6. device mounted on fr4 material with 1-inch 2 (6.45cm 2 ), 2oz (0.071mm thick) cu. 7. short duration pulse test used to minimize self- heating effect. 8. guaranteed by design. not subject to production testing.
dmp1012ucb9 document number: ds36844 rev. 7 - 2 3 of 6 www.diodes.com january 2015 ? diodes incorporated dmp1012ucb9 new product advance information advanced information 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v , drain -source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d v = -1.2v gs v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -4.5v gs v = -4.0v gs v = -1.0v gs 0 2 4 6 8 10 0 0.5 1 1.5 2 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d t = 150 c a t = 125 c a t = 85 c a t = 25 c a t = -55 c a v = -5.0v ds 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 1 2 3 4 5 6 v , gate-source voltage (v) gs figure 3 typical transfer characteristic r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) ds(on) i = -2.0a d 0 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j figure 4 on-resistance variation with temperature r , d r a i n - s o u r c e on-resistance (normalized) ds(on) v = -4.5v i = -3a gs d v = -2.5v i = -1a gs d 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) figure 5 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) gs(th) -i = 1ma d -i = 250a d 0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 v , source-drain voltage (v) figure 6 diode forward voltage vs. current sd i , s o u r c e c u r r e n t ( a ) s t = 150 c a t = 125 c a t = 85 c a t = 25 c a t = -55 c a
dmp1012ucb9 document number: ds36844 rev. 7 - 2 4 of 6 www.diodes.com january 2015 ? diodes incorporated dmp1012ucb9 new product advance information advanced information 10 100 1000 10000 0 1 2 3 4 5 6 7 8 c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) figure 7 typical junction capacitance ds c oss c rss f = 1mhz c iss 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 2 4 6 8 10 q , total gate charge (nc) figure 8 gate-charge characteristics g - v , g a t e - s o u r c e v o l t a g e ( v ) gs v = -4v i = -2a ds d 0.01 0.1 1 10 100 0.01 0.1 1 10 v , drain-source voltage (v) figure 9 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c j(max) a v = 4.5v single pulse gs dut on 1 * mrp board 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 t1, pulse duration times (sec) figure 10 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 138c/w duty cycle, d = t1/ t2 ja ja ja
dmp1012ucb9 document number: ds36844 rev. 7 - 2 5 of 6 www.diodes.com january 2015 ? diodes incorporated dmp1012ucb9 new product advance information advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datash eets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datash eets/ap02001.pdf for the latest version. u - wlb1515 - 9 dim min max typ a - 0.62 - a2 - 0.36 0.36 a3 0.020 0.030 0.025 b 0.27 0.37 0.32 d 1.47 1.49 e 1.47 1.49 e - - 0.50 all dimensions in mm dimensions value (in mm) c 0.50 c1 1.00 c2 1.00 d 0.25 c c1 c d c2 d e pin id e e 6x-? b e a2 a seating plane a3 e
dmp1012ucb9 document number: ds36844 rev. 7 - 2 6 of 6 www.diodes.com january 2015 ? diodes incorporated dmp1012ucb9 new product advance information advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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